參數(shù)資料
型號： MMDF2C03HD
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 2 Amps, 30 Volts Complementary SO8, Dual(2A,30V,SO-8,N/P溝道功率雙MOSFET)
中文描述： 功率MOSFET 2安培，30伏特互補SO8封裝，雙（第2A，30V的，蘇- 8，N / P系列溝道功率雙MOSFET的）
文件頁數(shù)： 2/10頁
文件大小： 116K
代理商： MMDF2C03HD
MMDF2C03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Note 3)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
Adc)
V
(BR)DSS
30
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
DSS
(N)
(P)
1.0
1.0
Adc
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
(N)
(P)
1.0
1.0
1.7
1.5
3.0
2.0
Vdc
DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
DraintoSource OnResistance
(V
GS
= 4.5 Vdc, I
D
= 1.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 1.0 Adc)
Forward Transconductance
(V
DS
= 3.0 Vdc, I
D
= 1.5 Adc)
(V
DS
= 3.0 Vdc, I
D
= 1.0 Adc)
R
DS(on)
(N)
(P)
0.06
0.17
0.070
0.200
R
DS(on)
(N)
(P)
0.065
0.225
0.075
0.300
g
FS
(N)
(P)
2.0
2.0
3.6
3.4
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
(N)
(P)
450
397
630
550
pF
Output Capacitance
C
oss
(N)
(P)
160
189
225
250
Transfer Capacitance
C
rss
(N)
(P)
35
64
70
126
SWITCHING CHARACTERISTICS
(Note 5)
TurnOn Delay Time
(V
DD
= 15 Vdc, I
D
= 3.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 9.1 )
(V
DD
= 15 Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 6.0 )
t
d(on)
(N)
(P)
12
16
24
32
ns
Rise Time
t
r
(N)
(P)
65
18
130
36
TurnOff Delay Time
t
d(off)
(N)
(P)
16
63
32
126
Fall Time
t
f
(N)
(P)
19
194
38
390
TurnOn Delay Time
(V
DD
= 15 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 )
(V
DD
= 15 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc, R
G
= 6.0 )
t
d(on)
(N)
(P)
8.0
9.0
16
18
Rise Time
t
r
(N)
(P)
15
10
30
20
TurnOff Delay Time
t
d(off)
(N)
(P)
30
81
60
162
Fall Time
t
f
(N)
(P)
23
192
46
384
Total Gate Charge
(V
DS
= 10 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc)
(V
DS
= 24
Vdc, I
= 2.0 Adc,
V
GS
= 10 Vdc)
Q
T
(N)
(P)
11.5
14.2
16
19
nC
GateSource Charge
Q
1
(N)
(P)
1.5
1.1
GateDrain Charge
Q
2
(N)
(P)
3.5
4.5
Q
3
(N)
(P)
2.8
3.5
3. Negative signs for PChannel device omitted for clarity.
4. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperature.
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