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參數(shù)資料
| 型號： | MMDF2C02E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual Power MOSFET 2.5 Amps, 25 Volts(2.5A，25V，雙功率MOS場效應(yīng)管（N溝道+P溝道）) |
| 中文描述： | 雙功率MOSFET2.5安培，25伏（包2.5a，25V的，雙功率馬鞍山場效應(yīng)管（不適用溝道P溝道）） |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MMDF2C02E |
MMDF2C02E
http://onsemi.com
10
INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self–align when
subjected to a solder reflow process.
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6
0.050
1.270
0.155
4.0
SO–8 POWER DISSIPATION
The power dissipation of the SO–8 is a function of the
input pad size. This can vary from the minimum pad size
for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, R
θ
JA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet for the SO–8 package, PD can be calculated as
follows:
TJ(max) – TA
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
PD =
into the equation for an ambient temperature TA of 25
°
C,
one can calculate the power dissipation of the device which
in this case is 2.0 Watts.
150
°
C – 25
°
C
62.5
°
C/W
The 62.5
°
C/W for the SO–8 package assumes the
recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 2.0 Watts using the
footprint shown. Another alternative would be to use a
ceramic substrate or an aluminum core board such as
Thermal Clad . Using board material such as Thermal
Clad, the power dissipation can be doubled using the same
footprint.
PD =
= 2.0 Watts
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°
C.
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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