5
MOTOROLA RF/IF APPLICATIONS INFORMATION
The typical operation model parameters for transistors
used in the phase detector of the MC145170 are listed at the
end of this paper. For NRD and NRS, use 4/210 for the pmos
in the PDout driver, 4/66 for the nmos in the PDout driver,
4/300 for the pmos in the phiV and phiR buffers and 4/120 for
the nmos in the phiR and phiV buffers. M can be used to
establish the desired output drive of the transistors (from the
MC145170 specification).
The operation of the phase detector can be simulated for
different limits specified in the data sheet by modifying M for
the output transistors and the adjusting the value of the delay
element. For simulating devices with a specific minimum
pulse width, set the delay to the desired value. To observe the
effect of changing transistor drive levels, set M appropriately.
Additional Modifications
The examples shown below can be simulated using
MicroSim PSpice. In addition, the evaluation version of
PSpice can also be used for simulation if appropriate
adjustments to the models are made. These changes are
only two. The libraries provided with the evaluation PSpice
program do not include the primitive logic gates or the delay
element. They do however contain several of the “7400”
models which can be used for this application. The 7407
model can be used to implement the delay component and
the 7402 can be used for constructing the RSFF. While the
7407 needs to be modified for use as a delay element, the
7402 can be used as is or the “02” model can be edited to
reduce the propagation delay to that more in line with the
primitive NOR gate.
Two changes must be made to the 7407 to use it as a
delay element. The 7407 model must be modified to
eliminate the “open collector” reference and the “07” model
must be modified to contain the correct delay information.
This can be done to the existing model or the 7407 and 07
models can be copied to the user library, renamed and
modified to provide the special delay element. A simple text
editor can be used to edit the device models.
Out
VCOout
5 V
0 V
ctrl
1e99
R1
sin(tw*(fc*time+N*v(int)))
1
1E3
1e–6
+
PARAMETERS:
tw
fc
k1
6.283
6e6
1.26e7
PARAMETERS:
N
Qc
120
1e–6
IN+
IN–
OUT+
OUT–
evalue
sin(tw*((fc/N)*time+v(int)))
0
ctrl
IN+
IN–
gvalue
(k1/(tw*N))*v(ctrl)*Qc
G1
E1
C1
IC = 0 int
Figure 10.
Modeling the VCO
The VCO (Figure 10) is also modeled using Analog
Behavioral Modeling. The model used in the following
examples assumes a linear response however the control
voltage equation can be modified as desired. The circuit is
modeled as a sine generator controlled by the control
voltage. The sine generator can be modeled using the
EVALUE function or the ABM function. In Figure 10, the
EVALUE function is used to generate the divided output and
the ABM function is used for the undivided output. Either the
GVALUE or the ABM/I function can be used for the control
voltage.
The equation for the generator is:
e=sin(tw*((fc/N)*time+v(int))).
fc is defined as the output frequency when the control
voltage is zero. This is the expected VCO frequency before
frequency division. For the purpose of simulation, the counter
value, N, has been written into the equation to insure the
correlation between the modeled circuit and the
mathematical loop filter calculations. tw is pi times two;
additional decimal places can be added as needed. v(int) is
the control voltage effect and is defined in these examples
as:
v(int)=(k1/(tw*N))*v(cntl)*1e–10.
The value C1 in the schematic of the VCO can be
arbitrarily changed however the value must match that of Qc.
Qc determines the value of the current to be integrated by the