參數(shù)資料
型號(hào): MB8118165B-60
廠商: Fujitsu Limited
英文描述: CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超級頁面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 100萬× 16位的超頁模式動(dòng)態(tài)RAM的CMOS(100萬× 16位超級頁面存取模式動(dòng)態(tài)內(nèi)存)
文件頁數(shù): 13/28頁
文件大?。?/td> 651K
代理商: MB8118165B-60
13
MB8118165B-50/-60
Fig. 6 – EARLY WRITE CYCLE
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
LCAS
or
UCAS
WE
DQ
(Input)
A
0
to A
9
V
OH
V
OL
DQ
(Output)
t
RC
t
RAS
t
RP
t
CSH
t
RCD
t
CRP
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
HIGH-Z
ROW ADD
COLUMN ADD
t
WCR
t
WCS
t
WCH
t
DH
t
DS
VALID DATA IN
t
RSH
t
AR
t
DHR
DESCRIPTION
A write cycle is similar to a read cycle except WE is set to a Low state and OE is a “H” or “L” signal. A write cycle can be implemented
in either of three ways–early write, delayed write, or read-modify-write. During all write cycles, timing parameters t
RWL
, t
CWL
, t
RAL
and t
CAL
must be satisfied. In the early write cycle shown above t
WCS
satisfied, data on the DQ pins are latched with the falling edge
of LCAS or UCAS and written into memory.
“H” or “L” level (excluding Address and DQ)
“H” or “L” level, “H
L” or “L
H” transition (Address and DQ)
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