參數(shù)資料
型號: MB8118165B-50
廠商: Fujitsu Limited
英文描述: CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超級頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 100萬× 16位的超頁模式動態(tài)RAM的CMOS(100萬× 16位超級頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 9/28頁
文件大小: 651K
代理商: MB8118165B-50
9
MB8118165B-50/-60
(Continued)
No.
Parameter
Notes
Symbol
MB8118165B-50
Min.
7
13
7
0
7
18
65
30
40
MB8118165B-60
Min.
10
15
10
0
10
24
77
32
47
Unit
Max.
Max.
36
37
38
39
40
41
42
43
44
WE Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
DIN Set Up Time
DIN Hold Time
Data Hold Time from RAS
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS Precharge Time to CAS
Active Time (Refresh Cycles)
CAS Set Up Time for CAS-before-
RAS Refresh
CAS Hold Time for CAS-before-
RAS Refresh
Access Time from OE
Output Buffer Turn Off Delay from OE
OE to RAS Lead Time for Valid Data
OE to CAS Lead Time
OE Hold Time Referenced to WE
OE to Data In Delay Time
RAS to Data In Delay Time
CAS to Data In Delay Time
DIN to CAS Delay Time
DIN to OE Delay Time
OE Precharge Time
OE Hold Time Referenced to CAS
WE Precharge Time
WE to Data In Delay Time
Hyper Page Mode RAS Pulse Width
Hyper Page Mode Read/Write Cycle Time
Hyper Page Mode Read-Modify-Write Cycle
Time
Access Time from CAS Precharge
Hyper Page Mode CAS Precharge Time
Hyper Page Mode RAS Hold Time from CAS
Precharge
Hyper Page Mode CAS Precharge to
WE Delay Time
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
t
RWD
t
CWD
t
AWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
*20
*20
*20
45
t
RPC
5
5
ns
46
t
CSR
0
0
ns
47
t
CHR
10
10
ns
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
*9
t
OEA
t
OEZ
t
OEL
t
COL
t
OEH
t
OED
t
RDD
t
CDD
t
DZC
t
DZO
t
OEP
t
OECH
t
WPZ
t
WED
t
RASP
t
HPC
5
5
5
13
13
13
0
0
5
7
5
13
20
15
13
5
5
5
15
15
15
0
0
5
10
5
15
25
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*10
*16
*17
*17
100000
100000
64
t
HPRWC
59
69
ns
65
66
*9,18
t
CPA
t
CP
7
30
10
35
ns
ns
67
t
RHCP
30
35
ns
68
*20
t
CPWD
45
52
ns
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