參數(shù)資料
型號: MB8117805B-50
廠商: Fujitsu Limited
英文描述: CMOS 2M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2M ×8 位超級頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 200萬× 8位超頁模式動態(tài)RAM的CMOS(200萬× 8位超級頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 9/29頁
文件大?。?/td> 574K
代理商: MB8117805B-50
9
MB8117805B-50/-60
(Continued)
No.
Parameter
Notes
Symbol
MB8117805B-50
MB8117805B-60
Unit
Min.
Max.
Min.
Max.
31
Read Command Hold Time
Referenced to RAS
*14
t
RRH
0
0
ns
32
Read Command Hold Time
Referenced to CAS
*14
t
RCH
0
0
ns
33
Write Command Set Up Time
*15
t
WCS
0
0
ns
34
Write Command Hold Time
t
WCH
7
10
ns
35
Write Hold Time from RAS
t
WCR
18
24
ns
36
WE Pulse Width
t
WP
7
10
ns
37
Write Command to RAS Lead Time
t
RWL
13
15
ns
38
Write Command to CAS Lead Time
t
CWL
7
10
ns
39
DIN Set Up Time
t
DS
0
0
ns
40
DIN Hold Time
t
DH
7
10
ns
41
Data Hold Time from RAS
t
DHR
18
24
ns
42
RAS to WE Delay Time
*20
t
RWD
65
77
ns
43
CAS to WE Delay Time
*20
t
CWD
30
32
ns
44
Column Address to WE Delay Time
*20
t
AWD
40
47
ns
45
RAS Precharge Time to CAS
Active Time (Refresh Cycles)
t
RPC
5
5
ns
46
CAS Set Up Time for CAS-before-
RAS Refresh
t
CSR
0
0
ns
47
CAS Hold Time for CAS-before-RAS
Refresh
t
CHR
10
10
ns
48
Access Time from OE
*9
t
OEA
15
15
ns
49
Output Buffer Turn Off Delay from OE
*10
t
OEZ
13
15
ns
50
OE to RAS Lead Time for Valid Data
t
OEL
5
5
ns
51
OE to CAS Lead Time
t
COL
5
5
ns
52
OE Hold Time Referenced to WE
*16
t
OEH
5
5
ns
53
OE to Data in Delay Time
t
OED
13
15
ns
54
RAS to Data in Delay Time
t
RDD
13
15
ns
55
CAS to Data in Delay Time
t
CDD
13
15
ns
56
DIN to CAS Delay Time
*17
t
DZC
0
0
ns
57
DIN to OE Delay Time
*17
t
DZO
0
0
ns
58
OE Precharge Time
t
OEP
5
5
ns
59
OE Hold Time Referenced to CAS
t
OECH
7
10
ns
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