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參數(shù)資料
| 型號： | MB8118160A-70 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 1M×16 BIT Fast Page Mode Dynamic RAM(CMOS 1M×16 位快速頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 100萬× 16位快速頁面模式動態(tài)RAM的CMOS（100萬× 16位快速頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/26頁 |
| 文件大小： | 494K |
| 代理商： | MB8118160A-70 |
1
DS05-10187-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 1M
×
16 BIT
FAST PAGE MODE DYNAMIC RAM
MB8118160A-60/-70
CMOS 1,048,576
×
16 BIT Fast Page Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB8118160A is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory
cells accessible in 16-bit increments. The MB8118160A features a “fast page” mode of operation whereby high-
speed random access of up to 1,024
×
16 bits of data within the same row can be selected. The MB8118160A
DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory
applications where very low power dissipation and high bandwidth are basic requirements of the design. Since
the standby current of the MB8118160A is very small, the device can be used as a non-volatile memory in
equipment that uses batteries for primary and/or auxiliary power.
The MB8118160A is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon and two-
layer aluminum process. This process, coupled with advanced stacked capacitor memory cells, reduces the
possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements
for the MB8118160A are not critical and all inputs are TTL compatible.
I
PRODUCT LINE & FEATURES
Parameter
MB8118160A-60
60 ns max.
110 ns min.
30 ns max.
15 ns max.
40 ns min.
880 mW max.
11 mW max. (LTTL level)/5.5 mW max. (CMOS level)
MB8118160A-70
70 ns max.
130 ns min.
35 ns max.
17 ns max.
45 ns min.
825 mW max.
RAS Access Time
Random Cycle Time
Address Access Time
CAS Access Time
Fast Page Mode Cycle Time
Low Power Dissipation
Operating current
Standby current
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
1,048,576 words
×
16 bit organization
Silicon gate, CMOS, Advanced Stacked
Capacitor Cell
All input and output are TTL compatible
1,024 refresh cycles every 16.4 ms
Self refresh function
Early write or OE controlled write capability
RAS-only, CAS-before-RAS, or Hidden Refresh
Fast page mode, Read-Modify-Write capability
On chip substrate bias generator for high
performance
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