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參數(shù)資料
| 型號： | M30L0R7000T0ZAQE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | AB 35C 7#12,28#16 PIN RECP |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 82/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQE |
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M30L0R7000T0, M30L0R7000B0
82/83
REVISION HISTORY
Table 45. Document Revision History
Date
Version
Revision Details
05-May-2003
0.1
First Issue
17-Mar-2004
0.2
Write to Buffer and Program command renamed Buffer Program command.
Clear Status Register Command
,
Set Configuration Register Command
and
Synchronous Burst Read Mode
clarified.
Table 15., Program, Erase Times and Endurance Cycles
reformatted, and Buffer
Enhanced Factory Program timings added.
In
Table 19., DC Characteristics - Currents
, I
DD1
, I
DD2
, I
DD3
, I
DD4
, I
DD6
and I
DD7
,
values changed and 16 Word burst values added. V
PP1
and V
PPLK
values modified
in
Table 20., DC Characteristics - Voltages
.
APPENDIX A., BLOCK ADDRESS TABLES
reformatted. In
APPENDIX
B., COMMON FLASH INTERFACE
, 0 added in front of 2-digit offset values. Data
modified at address offset (P + 1D)h = 127h in
Table 37., Burst Read Information
.
Figure 29., Buffer Enhanced Factory Program Flowchart and Pseudo Code
modified.
APPENDIX D., COMMAND INTERFACE STATE TABLES
added.
03-Dec-2004
1.0
Figure 24., Program Suspend & Resume Flowchart and Pseudo Code
,
Figure
25., Block Erase Flowchart and Pseudo Code
and
Figure 26., Erase Suspend &
Resume Flowchart and Pseudo Code
modified. Flowchart modified and Pseudo
code added to
Figure 23., Buffer Program Flowchart and Pseudo Code
. Small text
changes. Alt symbol for t
AVWH
and t
AVEH
removed from Tables
23
and
24
,
respectively.
TFBGA88 package fully compliant with the ST ECOPACK specification.
Document status promoted from Target Specification to full Datasheet.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000T0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000T0ZAQT | CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000B0ZAQT | CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R8000T0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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