參數資料
型號: M30L0R7000T0ZAQE
廠商: 意法半導體
英文描述: AB 35C 7#12,28#16 PIN RECP
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數: 56/83頁
文件大?。?/td> 1329K
代理商: M30L0R7000T0ZAQE
M30L0R7000T0, M30L0R7000B0
56/83
Table 28. Daisy Chain Ordering Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the ST Sales Office nearest to you.
Example:
M30L0R7000
-ZAQ T
Device Type
M30L0R7000T0
Daisy Chain
ZAQ = LFBGA88 8 x 10mm, 0.80mm pitch, quadruple stacked footprint
Option
Blank = Standard Packing
T = Tape & Reel packing
E = Lead-Free and RoHS Package, Standard Packing
F = Lead-Free and RoHS Package, Tape & Reel Packing
相關PDF資料
PDF描述
M30L0R7000T0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014
M30L0R7000T0ZAQT CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014
M30L0R7000B0ZAQT CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014
M30L0R8000T0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關代理商/技術參數
參數描述
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000XX 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R8000B0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory