參數(shù)資料
型號: M30L0R7000T0ZAQE
廠商: 意法半導體
英文描述: AB 35C 7#12,28#16 PIN RECP
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數(shù): 29/83頁
文件大?。?/td> 1329K
代理商: M30L0R7000T0ZAQE
29/83
M30L0R7000T0, M30L0R7000B0
Figure 6. X-Latency and Data Output Configuration Example
Figure 7. Wait Configuration Example
AI06182
A22-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
X-latency
VALID DATA
tACC
tAVK_CPU
tK
tQVK_CPU
tQVK_CPU
tKQV
1st cycle
2nd cycle
3rd cycle
4th cycle
Note. Settings shown: X-latency = 4, Data Output held for one clock cycle
E
tDELAY
AI06972
A22-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
WAIT
CR8 = '0'
CR10 = '0'
WAIT
CR8 = '1'
CR10 = '0'
VALID DATA
NOT VALID
VALID DATA
E
WAIT
CR8 = '0'
CR10 = '1'
WAIT
CR8 = '1'
CR10 = '1'
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M30L0R8000T0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
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M30L0R8000B0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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