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參數(shù)資料
| 型號： | M30L0R7000T0ZAQE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | AB 35C 7#12,28#16 PIN RECP |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 79/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQE |
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M30L0R7000T0, M30L0R7000B0
Table 42. Command Interface States - Modify Table, Next Output State
Note: 1. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A
bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI mode, depending on the com-
mand issued. Each bank remains in its last output state until a new command is issued to that bank. The next state does not depend
on the bank output state.
2. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/Erase Con-
troller.
3. At Power-Up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined data out-
put.
4. The two cycle command should be issued to the same bank address.
5. If the P/E.C. is active, both cycles are ignored.
Current CI State
Command Input
Erase
Confirm
P/E
Resume,
Block
Unlock
confirm,
BEFP
Confirm
(4,5)
(D0h)
Read
Array
(3)
(FFh)
Program
Setup
(4,5)
(10/40h)
Buffer
Program
(E8h)
Block
Erase,
Setup
(4,5)
(20h)
BEFP
Setup
(80h)
Program/
Erase
Suspend
(B0h)
Read
Status
Register
(70h)
Clear
status
Register
(50h)
Read
Electronic
signature,
Read CFI
Query
(90h, 98h)
Program Setup
Erase Setup
OTP Setup
Program in Erase Suspend
BEFP Setup
BEFP Busy
Buffer Program Setup
Buffer Program Load 1
Buffer Program Load 2
Buffer Program Confirm
Buffer Program Setup in
Erase Suspend
Buffer Program Load 1 in
Erase Suspend
Buffer Program Load 2 in
Erase Suspend
Buffer Program Confirm in
Erase Suspend
Lock/CR Setup
Lock/CR Setup in Erase
Suspend
Status Register
OTP Busy
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Status
Register
Ready
Electronic
Signature/
CFI
Program Busy
Erase Busy
Buffer Program Busy
Program/Erase Suspend
Buffer Program Suspend
Program Busy in Erase
Suspend
Buffer Program Busy in
Erase Suspend
Program Suspend in Erase
Suspend
Buffer Program Suspend in
Erase Suspend
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000T0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000T0ZAQT | CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000B0ZAQT | CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R8000T0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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