- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359054 > M30L0R7000T0ZAQE (意法半導(dǎo)體) AB 35C 7#12,28#16 PIN RECP PDF資料下載
參數(shù)資料
| 型號(hào)： | M30L0R7000T0ZAQE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | AB 35C 7#12,28#16 PIN RECP |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 65/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁當(dāng)前第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁
65/83
M30L0R7000T0, M30L0R7000B0
Table 36. Protection Register Information
Table 37. Burst Read Information
Offset
Data
Description
Value
(P+E)h = 118h
0002h
Number of protection register fields in JEDEC ID space. 0000h indicates that
256 fields are available.
2
(P+F)h = 119h
0080h
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2
n
bytes in factory pre-programmed region
Bits 24-31 2
n
bytes in user programmable region
80h
(P+10)h = 11Ah
0000h
00h
(P+11)h = 11Bh
0003h
8 Bytes
(P+12)h = 11Ch
0003h
8 Bytes
(P+13)h = 11Dh
0089h
Protection Register 2: Protection Description
Bits 0-31 protection register address
Bits 32-39 n number of factory programmed regions (lower byte)
Bits 40-47 n number of factory programmed regions (upper byte)
Bits 48-55 2
n
bytes in factory programmable region
Bits 56-63 n number of user programmable regions (lower byte)
Bits 64-71 n number of user programmable regions (upper byte)
Bits 72-79 2
n
bytes in user programmable region
89h
(P+14)h = 11Eh
0000h
00h
(P+15)h = 11Fh
0000h
00h
(P+16)h = 120h
0000h
00h
(P+17)h = 121h
0000h
0
(P+18)h = 122h
0000h
0
(P+19)h = 123h
0000h
0
(P+1A)h = 124h
0010h
16
(P+1B)h = 125h
0000h
0
(P+1C)h = 126h
0004h
16
Offset
Data
Description
Value
(P+1D)h = 127h
0003h
Page-mode read capability
bits 0-7
’n’ such that 2
n
HEX value represents the number of read-
page bytes. See offset 28h for device word width to
determine page-mode data output width.
8 Bytes
(P+1E)h = 128h
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+1F)h = 129h
0001h
Synchronous mode read capability configuration 1
bit 3-7
Reserved
bit 0-2
’n’ such that 2
n+1
HEX value represents the maximum
number of continuous synchronous reads when the device is
configured for its maximum word width. A value of 07h
indicates that the device is capable of continuous linear
bursts that will output data until the internal burst counter
reaches the end of the device’s burstable address space.
This field’s 3-bit value can be written directly to the read
configuration register bit 0-2 if the device is configured for its
maximum word width. See offset 28h for word width to
determine the burst data output width.
4
(P+20)h = 12Ah
0002h
Synchronous mode read capability configuration 2
8
(P-21)h = 12Bh
(P+22)h = 12Ch
0003h
0007h
Synchronous mode read capability configuration 3
16
Synchronous mode read capability configuration 4
Cont.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000T0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000T0ZAQT | CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R7000B0ZAQT | CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R8000T0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。