參數(shù)資料
型號: M28W800B100N1T
廠商: NUMONYX
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù): 25/40頁
文件大?。?/td> 284K
代理商: M28W800B100N1T
31/40
M28W800T, M28W800B
Figure 11. Program Suspend & Resume Flowchart and Pseudo Code
Write 70h
Command
AI03524
Read Status
Register
YES
NO
b7 = 1
YES
NO
b2 = 1
Program Continues
Write FFh
Command
PES instruction:
– write B0h command
(memory enters read register
state after the PES instruction)
do:
– read status register
(E or G must be toggled)
while b7 = 1
If b2 = 0, Program completed
(at this point the memory will
accept only the RD or PER instruction)
RD instruction:
– write FFh command
– one or more data reads
from another block
Write D0h
Command
PER instruction:
– write D0h command
to resume erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase suspend
was not issued).
Read data from
another block
Start
Write B0h
Command
Program Complete
Write FFh
Command
Read Data
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