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參數(shù)資料
| 型號： | M28W800B100N1T |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 23/40頁 |
| 文件大?。?/td> | 284K |
| 代理商： | M28W800B100N1T |
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M28W800T, M28W800B
DESCRIPTION
The M28W800 is a 8 Mbit non-volatile Flash mem-
ory that can be erased electrically at the block lev-
el and programmed in-system on a Word-by-Word
basis. The device is offered in the TSOP48
(12 x 20 mm) and the BGA45 0.75mm ball pitch
packages. When shipped, all bits of the M28W800
are in the '1' state.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Each block can be programmed and
erased over 100,000 cycles. VDDQ allows to drive
the I/O pin down to 1.65V. An optional 12V VPP
power supply is provided to speed up the program
phase at customer production line environment.
An internal Command Interface (C.I.) decodes the
instructions to access/modify the memory content.
The Program/Erase Controller (P/E.C.) automati-
cally executes the algorithms taking care of the
timings necessary for program and erase opera-
tions. Verification is performed too, unburdening
the microcontroller, while the Status Register
tracks the status of the operation.
The following instructions are executed by the
M28W800: Read Array, Read Electronic Signa-
ture, Read Status Register, Clear Status Register,
Program, Block Erase, Program/Erase Suspend,
Program/Erase Resume, CFI Query.
Organisation
The M28W800 is organised as 512 Kbits by 16
bits. A0-A18 are the address lines; DQ0-DQ15 are
the Data Input/Output. Memory control is provided
by Chip Enable E, Output Enable G and Write En-
able W inputs.
A Reset/Power-Down controls the hardware reset
and the power-down.
The upper two (or lower two) parameter blocks
can be protected to secure the code content of the
memory. WP controls protection and unprotection
operations.
Memory Blocks
The device features an asymmetrical blocked ar-
chitecture. The M28W800 has an array of 23
blocks: 8 Parameter Blocks of 4 KWord and 15
Main Blocks of 32 KWord. M28W800T has the Pa-
rameter Blocks at the top of the memory address
space while the M28W800B locates the Parame-
ter Blocks starting from the bottom. The memory
maps are shown in Tables 3 and 4.
The two upper parameter blocks can be protected
from accidental programming or erasure, using
WP. Each block can be erased separately. Erase
can be suspended in order to perform either read
or program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed.
Table 2. Absolute Maximum Ratings (1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Depends on range.
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (2)
–40 to 85
°C
TBIAS
Temperature Under Bias
–40 to 125
°C
TSTG
Storage Temperature
–55 to 155
°C
VIO
Input or Output Voltage
–0.6 to VDDQ+0.6
V
VDD, VDDQ
Supply Voltage
–0.6 to 4.2
V
VPP
Program Voltage
–0.6 to 13.5
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W800BB90N1 | 功能描述:閃存 8M (512Kx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W800BB90ZB6T | 功能描述:閃存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W800BT100N6T | 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28W800BT90N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 512KX16 90NS 48TSOP - Trays |
| M28W800CB90N1 | 功能描述:閃存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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