參數(shù)資料
型號(hào)： M12L2561616A
廠商： Elite Semiconductor Memory Technology Inc.
英文描述： 4M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 4米× 16位× 4個(gè)銀行同步DRAM
文件頁(yè)數(shù)： 37/44頁(yè)
文件大?。?/td> 908K
代理商： M12L2561616A
ES MT
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
Publication Date
:
Aug. 2007
37/44
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
2. Burst stop is valid at every burst length.
相關(guān)PDF資料
PDF描述
M12L2561616A-6BG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6TG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7TG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L32162A 1M x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L2561616A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A2K 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L2561616A-5BG2K 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L2561616A-5TG2K 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
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