參數(shù)資料
型號(hào): M12L2561616A-7BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 4M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封裝: 8 X 13 MM, LEAD FREE, BGA-54
文件頁(yè)數(shù): 1/44頁(yè)
文件大?。?/td> 908K
代理商: M12L2561616A-7BG
ES MT
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
Publication Date
:
Aug. 2007
1/44
SDRAM
4M x 16 Bit x 4 Banks
Synchronous DRAM
FEATURES
y
JEDEC standard 3.3V power supply
y
LVTTL compatible with multiplexed address
y
Four banks operation
y
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
y
All inputs are sampled at the positive going edge of the
system clock
y
Burst Read single write operation
y
DQM for masking
y
Auto & self refresh
y
64ms refresh period (8K cycle)
GENERAL DESCRIPTION
The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Pin Arrangement
ORDERING INFORMATION
PRODUCT NO.
MAX FREQ. PACKAGE
COMMENTS
M12L2561616A-6TG
166MHz
TSOP II
Pb-free
M12L2561616A-6BG
166MHz
BGA
Pb-free
M12L2561616A-7TG
143MHz
TSOP II
Pb-free
M12L2561616A-7BG
143MHz
BGA
Pb-free
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
A
12
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
VSS
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
NC
UDQM
CLK
A12
A11
A8
A7
VSS
A5
VDDQ
DQ0
VSSQ
DQ2
VDDQ
DQ4
VDD
LDQM
CAS
RAS
BA0
BA1
A0
A1
A3
A2
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
G
H
J
VSSQ
VDDQ
VSSQ
VDDQ
VSS
CKE
A9
A6
A4
VDD
DQ1
DQ3
DQ7
WE
CS
A10
VDD
VSSQ
DQ6
DQ5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L2561616A-7BG2K 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
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M12L2561616A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7TG2K 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L2561616A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM