參數(shù)資料
型號(hào): KM44S4020CT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動(dòng)態(tài)RAM)
中文描述: 2米x 4位× 2銀行同步DRAM(2米× 4位× 2組同步動(dòng)態(tài)RAM)的
文件頁數(shù): 44/44頁
文件大?。?/td> 604K
代理商: KM44S4020CT
TIMING DIAGRAM - I
CMOS SDRAM
ELECTRONICS
REV. 4 Nov. '97
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Mode Register Set Cycle
HIGH
MRS
Auto Refresh
: Don't care
*Note :
1. CS, RAS, CAS, & WE activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new
3. Please refer to Mode Register Set table.
RAS activation.
New
Command
New Command
Hi-Z
Hi-Z
tRC
HIGH
MODE REGISTER SET CYCLE
* Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
Auto Refresh Cycle
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Key
Ra
*Note 3
*Note 1
*Note 2
ó
ó
ó
ó
ó
ó
ó
ó
ó
ó
ó
ó
ó
ó
ó
相關(guān)PDF資料
PDF描述
KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動(dòng)態(tài)RAM)
KM44V1000D 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式))
KM44V16000B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式))
KM44V16100B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式))
KM44V16100C 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM44S4020CT-G10 制造商:SEC 功能描述:SDRAM, 4M x 4, 44 Pin, Plastic, TSOP
KM44V1000D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4000AS-6 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP
KM44V4000C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4100AT-7 制造商:Samsung Semiconductor 功能描述: