參數(shù)資料
型號(hào): KM44S4020CT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動(dòng)態(tài)RAM)
中文描述: 2米x 4位× 2銀行同步DRAM(2米× 4位× 2組同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 18/44頁(yè)
文件大?。?/td> 604K
代理商: KM44S4020CT
CMOS SDRAM
DEVICE OPERATIONS - I
ELECTRONICS
REV. 4 Feb. '98
1) Read interrupted by Read (BL=4)
3. CAS Interrupt (I)
CLK
CMD
ADD
Note 1
RD
RD
A
B
QA
0
QB
1
QB
2
QB
3
QB
0
QA
0
QB
1
QB
2
QB
3
QB
0
tCCD
Note 2
2) Write interrupted by Write (BL=2)
3) Write interrupted by Read (BL=2)
WR
WR
A
B
tCCD Note 2
DA
0
DB
1
DB
0
tCDL
Note 3
CLK
CMD
ADD
DQ
WR
RD
A
B
tCCD Note 2
tCDL
Note 3
DA
0
QB
1
QB
0
DA
0
QB
1
QB
0
DQ(CL2)
DQ(CL3)
*Note :
1. By " Interrupt", It is meant to stop burst read/write by external command before the end of burst.
By "CAS Interrupt", to stop burst read/write by
2. t
CCD
: CAS to CAS delay. (=1CLK)
3. t
CDL
: Last data in to new column address delay. (=1CLK)
CAS access ; read and write.
DQ(CL2)
DQ(CL3)
相關(guān)PDF資料
PDF描述
KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動(dòng)態(tài)RAM)
KM44V1000D 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM44V16000B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM44V16100B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM44V16100C 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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KM44V1000D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4000AS-6 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP
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KM44V4100AT-7 制造商:Samsung Semiconductor 功能描述: