參數(shù)資料
型號(hào)： KM44S4020CT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動(dòng)態(tài)RAM)
中文描述： 2米x 4位× 2銀行同步DRAM（2米× 4位× 2組同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 40/44頁(yè)
文件大小： 604K
代理商： KM44S4020CT
TIMING DIAGRAM - I
CMOS SDRAM
ELECTRONICS
REV. 4 Nov. '97
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Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length=Full page
Row Active
(A-Bank)
Burst Stop
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
Write
(A-Bank)
*Note 2
tBDL
*Note :
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding
memory cell. It is defined by AC parameter of t
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
RDL.
HIGH
tRDL
BA
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
A
10
/AP
DAa0
DAa1
DAa2
DAa3
DAa4
DAb0
DAb1
DAb2
DAb3
DAb4
DAb5
RAa
CAa
CAb
RAa
相關(guān)PDF資料
PDF描述
KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動(dòng)態(tài)RAM)
KM44V1000D 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM44V16000B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM44V16100B 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM44V16100C 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM44S4020CT-G10 制造商:SEC 功能描述:SDRAM, 4M x 4, 44 Pin, Plastic, TSOP
KM44V1000D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4000AS-6 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP
KM44V4000C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
KM44V4100AT-7 制造商:Samsung Semiconductor 功能描述:
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