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參數(shù)資料
| 型號： | K4S161622D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 16Bit x 2 Banks Synchronous DRAM |
| 中文描述： | 為512k × 16 × 2銀行同步DRAM |
| 文件頁數(shù)： | 6/41頁 |
| 文件大?。?/td> | 1127K |
| 代理商： | K4S161622D |
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K4S161622D
CMOS SDRAM
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Note :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-55
-60
-70
-80
-10
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS Latency=3
t
CC
5.5
1000
6
1000
7
1000
8
1000
10
1000
ns
1
CAS Latency=2
-
-
8.7
10
12
CLK to valid
output delay
CAS Latency=3
t
SAC
-
5
-
5.5
-
5.5
-
6
-
6
ns
1, 2
CAS Latency=2
-
-
-
-
-
7.7
-
6
-
8
Output data
t
OH
2
-
2.5
-
2.5
-
2.5
-
2.5
-
ns
2
CLK high pulse width
CAS Latency=3
t
CH
2
-
2.5
-
3
-
3
-
3.5
-
ns
3
CAS Latency=2
-
-
CLK low pulse width
CAS Latency=3
t
CL
2
-
2.5
-
3
-
3
-
3.5
-
ns
3
CAS Latency=2
-
Input setup time
CAS Latency=3
t
SS
1.5
-
1.5
-
1.75
-
2
-
2.5
-
ns
3
CAS Latency=2
-
-
2.5
Input hold time
t
SH
1
-
1
-
1
-
1
-
1
-
ns
3
CLK to output in Low-Z
t
SLZ
1
-
1
-
1
-
1
-
1
-
ns
2
CLK to output
in Hi-Z
CAS Latency=3
t
SHZ
-
5
-
5.5
-
5.5
-
6
-
6
ns
CAS Latency=2
-
-
-
-
-
7.7
-
6
-
8
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. Also, supported tRDL=2CLK for - 55/60 part which is distinguished by bucket code "J".
From the next generation, tRDL will be only 2CLK for every clock frequency.
Parameter
Symbol
Version
-70
7
14
17.4
17.4
43.5
100
60.9
Unit
-55
5.5
11
16.5
16.5
38.5
-60
6
12
18
18
42
-80
8
16
20
20
48
-10
10
20
20
20
48
CLK cycle time
Row active to row active delay
RAS to CAS delay
Row precharge time
t
CC(min)
t
RRD(min)
t
RCD(min)
t
RP(min)
t
RAS(min)
t
RAS(max)
t
RC
(
min
)
ns
ns
ns
ns
ns
us
ns
Row active time
Row cycle time
55
60
70
70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S161622E | 1M x 16 SDRAM |
| K4S161622E-TC10 | 1M x 16 SDRAM |
| K4S161622E-TC55 | 1M x 16 SDRAM |
| K4S161622E-TC60 | 1M x 16 SDRAM |
| K4S161622E-TC70 | 1M x 16 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S161622D-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM |
| K4S161622D-TC/L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM |
| K4S161622D-TC/L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM |
| K4S161622D-TC/L70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM |
| K4S161622D-TC/L80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM |
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