參數(shù)資料
型號: K4S161622D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x 16Bit x 2 Banks Synchronous DRAM
中文描述: 為512k × 16 × 2銀行同步DRAM
文件頁數(shù): 25/41頁
文件大?。?/td> 1127K
代理商: K4S161622D
CMOS SDRAM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
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15
16
17
18
19
K4S161622D
*Note :
1. All inputs expect CKE & DQM can be don
t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
BA
0
1
0
1
Operation
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
BA
0
1
Active & Read/Write
Bank A
Bank B
BA
0
1
X
Precharge
Bank A
Bank B
Both Banks
A10/AP
0
0
1
0
1
相關PDF資料
PDF描述
K4S161622E 1M x 16 SDRAM
K4S161622E-TC10 1M x 16 SDRAM
K4S161622E-TC55 1M x 16 SDRAM
K4S161622E-TC60 1M x 16 SDRAM
K4S161622E-TC70 1M x 16 SDRAM
相關代理商/技術參數(shù)
參數(shù)描述
K4S161622D-TC/L10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC/L55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC/L60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC/L70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC/L80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM