參數(shù)資料
型號(hào)： IS42S16128-10T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 256K X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
封裝： 0.400 INCH, TSOP2-50
文件頁數(shù)： 4/75頁
文件大?。?/td> 638K
代理商： IS42S16128-10T
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/13/00
IS42S16128
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
CC
MAX
VccQ
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
T
STG
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
–
1.0 to +4.6
–
1.0 to +4.6
–
1.0 to +5.5
–
1.0 to +4.6
1
50
0 to +70
–
55 to +150
V
V
V
V
W
mA
°
C
°
C
MAX
DC RECOMMENDED OPERATING CONDITIONS
At T
A
= 0 to +70
°
C
(2)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
, V
CC
Q
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
–
0.3
3.3
—
—
3.6
5.5
+0.8
V
V
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
3. V
IH
(max) = 5.5V for pulse width - 5 ns.
3. V
IL
(min) =
–
1.0V for pulse width - 5 ns.
CAPACITANCE CHARACTERISTICS
At T
A
= 0 to +25
°
C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz
(1,2)
Symbol
Parameter
Typ.
Max.
Unit
C
IN
1
C
IN
2
CI/O
Input Capacitance: A0-A9
Input Capacitance: (CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
—
—
—
5
5
7
pF
pF
pF
相關(guān)PDF資料
PDF描述
IS42S16128-12T 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16128-12T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16128-8T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16160A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S16160A-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM
IS42S16160A-7T 制造商:Integrated Silicon Solution Inc 功能描述:
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