- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377549 > IS42S16128-10T (INTEGRATED SILICON SOLUTION INC) 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS42S16128-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 256K X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 |
| 封裝： | 0.400 INCH, TSOP2-50 |
| 文件頁數(shù)： | 23/75頁 |
| 文件大?。?/td> | 638K |
| 代理商： | IS42S16128-10T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁
IS42S16128
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/13/00
23
Read With Auto-Precharge
The read with auto-precharge command first executes a
burst read operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes, the bank goes to the idle state. Thus this
command performs a read command and a precharge
command in a single operation.
During this operation, the delay period (t
PQL
) between the
last burst data output and the start of the precharge
operation differs depending on the
CAS
latency setting.
When the
CAS
latency setting is one, the precharge
operation starts a the same time as the last burst data is
output (t
PQL
= 0). When the
CAS
latency setting is two,
the precharge operation starts on one clock cycle before
the last burst data is output (t
PQL
=
–
1). When the
CAS
latency setting is three, the precharge operation starts on
two clock cycles before the last burst data is output
(t
PQL
=
–
2). Therefore, the selected bank can be made
active after a delay of t
RP
from the start position of this
precharge operation.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
COMMAND
I/O
CLK
COMMAND
I/O
CLK
READA 0
ACT 0
t
RP
t
RP
PRECHARGE START
READ WITH AUTO-PRECHARGE
(BANK 0)
t
PQL
t
PQL
READA 0
ACT 0
PRECHARGE START
READ WITH AUTO-PRECHARGE
(BANK 0)
D
OUT
0
D
OUT
1
D
OUT
2
D
OUT
3
D
OUT
0
D
OUT
1
D
OUT
2
D
OUT
3
CAS
latency = 2, burst length = 4
CAS
latency = 3, burst length = 4
CAS
Latency
t
PQL
3
2
–
2
–
1
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S16128-12T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | Chassis Mount and Din Rail Filters RoHS Compliant: Yes |
| IS42S16160B-7TL | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S16160B-7TLI | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16128-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16160A-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S16160A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S16160A-7T | 制造商:Integrated Silicon Solution Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。