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參數(shù)資料
| 型號： | IS42S16128-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 256K X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 |
| 封裝： | 0.400 INCH, TSOP2-50 |
| 文件頁數(shù)： | 21/75頁 |
| 文件大?。?/td> | 638K |
| 代理商： | IS42S16128-10T |
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IS42S16128
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/13/00
21
Burst Length and Column Address Sequence
Column Address
A2
A1
Address Sequence
Sequential
Burst Length
A0
Interleaved
2
X
X
X
X
X
X
0
0
0
0
1
1
1
1
n
X
X
0
0
1
1
0
0
1
1
0
0
1
1
n
0
1
0
1
0
1
0
1
0
1
0
1
0
1
n
0-1
1-0
0-1
1-0
4
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
8
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Cn, Cn+1, Cn+2
Cn+3, Cn+4.....
...Cn-1(Cn+255),
Cn(Cn+256).....
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
None
Full Page
(256)
Notes:
1. The burst length in full page mode is 256.
Bank Select and Precharge Address Allocation
Row
X0
X1
X2
X3
X4
X5
X6
X7
X8
—
—
—
—
—
—
—
—
0
1
0
1
—
—
—
—
—
—
—
—
0
1
0
1
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Row Address
Precharge of the Selected Bank (Precharge Command)
Precharge of Both Banks (Precharge Command)
Bank 0 Selected (Precharge and Active Command)
Bank 1 Selected (Precharge and Active Command)
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Column Address
Auto-Precharge Not Performed
Auto-Precharge Performed
Bank 0 Selected (Read and Write Commands)
Bank 1 Selected (Read and Write Commands)
Row Address
(Active Command)
X9
Column
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16128-12T | 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | Chassis Mount and Din Rail Filters RoHS Compliant: Yes |
| IS42S16160B-7TL | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S16160B-7TLI | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16128-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16128-8T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16160A-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S16160A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Synchronous DRAM |
| IS42S16160A-7T | 制造商:Integrated Silicon Solution Inc 功能描述: |
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