參數(shù)資料
型號(hào): IRF6610
廠商: International Rectifier
英文描述: HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
中文描述: HEXFET功率MOSFET硅技術(shù)與先進(jìn)的DirectFETTM
文件頁(yè)數(shù): 9/9頁(yè)
文件大?。?/td> 243K
代理商: IRF6610
IRF6610
www.irf.com
9
DirectFET
Tape & Reel Dimension
(Showing component orientation).
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
05/05
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
DIMENSIONS
METRIC
IMPERIAL
Loaded Tape Feed Direction
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6610). For 1000 parts on 7" reel,
order IRF6610TR1
STANDARD OPTION
(QTY 4800)
METRIC
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
TR1 OPTION
(QTY 1000)
METRIC
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
REEL DIMENSIONS
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IRF6610TR1 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6610TR1PBF 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6610TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6610TRPBF 功能描述:MOSFET 20V 1 N-CH HEXFET 6.8mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6611 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube