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參數(shù)資料
| 型號(hào)： | IRF6622 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 244K |
| 代理商： | IRF6622 |
www.irf.com
1
04/04/06
IRF6622
Power MOSFET
DirectFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.6 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Socket
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.18mH, R
G
= 25
, I
AS
= 12A.
DirectFET
ISOMETRIC
Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge.
0
2
4
6
8
10
12
14
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 12A
V
DSS
25V max
Q
g tot
11nC
V
GS
R
DS(on)
4.9m
@ 10V
Q
gs2
1.6nC
R
DS(on)
6.8m
@ 4.5V
Q
oss
V
gs(th)
7.7nC
±20V max
Q
gd
3.8nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
A
12
Max.
25
12
59
120
13
±20
15
MQ
MX
MT
MP
Q
rr
7.1nC
1.8V
3
4
5
6
7
8
9
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
T
)
ID = 15A
TJ = 25°C
TJ = 125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6622PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6622TR1 | 制造商:International Rectifier 功能描述: |
| IRF6622TR1PBF | 功能描述:MOSFET 25V 1 N-CH HEXFET 6.3mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6622TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 25V, 12A, DIRECTFET SQ |
| IRF6622TRPBF | 功能描述:MOSFET 25V 1 N-CH HEXFET 6.3mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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