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參數(shù)資料
| 型號(hào)： | IRF6622 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 244K |
| 代理商： | IRF6622 |
www.irf.com
3
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
Surface mounted on 1 in. square Cu (still
air).
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratings
Parameter
Units
W
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Thermal Resistance
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.7
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
°C/W
W/°C
0.017
270
-40 to + 150
Max.
2.2
1.4
34
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
τ
4
τ
4
R
4
R
4
τ
A
τ
A
τ
5
τ
5
R
5
R
5
Ri (°C/W)
τ
i (sec)
1.620 0.000126
2.141 0.001354
22.289 0.375850
20.046 7.41
11.914 99
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6622PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6622TR1 | 制造商:International Rectifier 功能描述: |
| IRF6622TR1PBF | 功能描述:MOSFET 25V 1 N-CH HEXFET 6.3mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6622TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 25V, 12A, DIRECTFET SQ |
| IRF6622TRPBF | 功能描述:MOSFET 25V 1 N-CH HEXFET 6.3mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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