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參數(shù)資料
| 型號(hào)： | IRF6638PBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 268K |
| 代理商： | IRF6638PBF |
www.irf.com
1
07/13/06
IRF6638PbF
IRF6638TRPbF
DirectFET
Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.19mH, R
G
= 25
, I
AS
= 20A.
DirectFET
ISOMETRIC
Description
The IRF6638PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications
.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
MQ
MX
MT
MP
Units
V
A
mJ
A
20
Max.
30
20
140
200
37
±20
25
V
DSS
30V max
Q
g tot
30nC
V
GS
R
DS(on)
2.2m
@ 10V
Q
gs2
3.2nC
R
DS(on)
3.0m
@ 4.5V
Q
oss
V
gs(th)
18.4nC
±20V max
Q
gd
11nC
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
T
)
ID = 25A
TJ = 25°C
TJ = 125°C
Q
rr
27nC
1.8V
0
5
10
15
20
25
30
35
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 20A
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6638TRPbF | DirectFET Power MOSFET |
| IRF6643TRPBF | DirectFET Power MOSFET - Typical value (unless otherwise specified) |
| IRF6645 | DirectFET Power MOSFET Typical calues (unless otherwise specified) |
| IRF6648 | DirectFET Power MOSFET |
| IRF6655 | DirectFET Power MOSFET Typical values (unless otherwise specified) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6638TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6638TR1PBF | 制造商:International Rectifier 功能描述:MOSFET N |
| IRF6638TR1PBF | 制造商:International Rectifier 功能描述:MOSFET N CHANNEL 30V 25A |
| IRF6638TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6641TR1PBF | 功能描述:MOSFET MOSFT 200V 26A 60mOhm 34nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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