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參數(shù)資料
| 型號(hào)： | IRF6648 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | IRF6648 |
www.irf.com
1
08/30/05
IRF6648
Power MOSFET DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6648 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a
primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance isolated DC-DC converters.
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Optimized for Synchronous Rectification for 5V
to 12V outputs
Ideal for 24V input Primary Side Forward Converters
Low Conduction Losses
Compatible with Existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
T
C
measured with thermocouple mounted to top (Drain) of part.
SH
SJ
SP
MZ
MN
V
DSS
60V max ±20V max 5.5m
@ 10V
V
GS
R
DS(on)
Q
g tot
36nC
Q
gd
14nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
I
S
@ T
C
= 25°C
I
S
@ T
C
= 70°C
I
SM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
A
69
260
81
52
Max.
60
±20
86
260
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6648PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6648TR1 | 功能描述:MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6648TR1PBF | 功能描述:MOSFET MOSFT 60V 86A 7.0mOhm 36nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6648TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6648TR1PBF | 制造商:International Rectifier 功能描述:MOSFET N DIRECTFET 60V MN |
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