- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377505 > IRF6655 (International Rectifier) DirectFET Power MOSFET Typical values (unless otherwise specified) PDF資料下載
參數(shù)資料
| 型號： | IRF6655 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET Typical values (unless otherwise specified) |
| 中文描述： | DirectFET功率MOSFET的典型值（除非另有說明） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 262K |
| 代理商： | IRF6655 |
www.irf.com
1
11/16/05
IRF6655
Power MOSFET
DirectFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.89mH, R
G
= 25
, I
AS
= 5.0A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Fig 2.
Typical On-Resistance Vs. Gate Voltage
Description
The IRF6655 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
Low Conduction Losses
Compatible with existing Surface Mount Techniques
SH
MQ
MX
MT
MN
V
DSS
100V max ±20V max
Q
g tot
8.7nC
V
GS
R
DS(on)
53m
@ 10V
V
gs(th)
3.9V
Q
gd
2.8nC
DirectFET
ISOMETRIC
4
6
8
10
12
14
16
18
VGS, Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
TD
)
ID = 5.0A
TJ = 125°C
TJ = 25°C
0
2
4
6
8
10
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VG
VDS= 80V
VDS= 50V
VDS= 20V
ID= 5.0A
Units
V
A
mJ
A
11
5.0
Max.
100
3.4
19
34
±20
4.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6668PBF | DirectFET Power MOSFET |
| IRF6668TRBF | DirectFET Power MOSFET |
| IRF6714MPBF | DirectFET㈢Power MOSFET |
| IRF6714MTRPBF | DirectFET㈢Power MOSFET |
| IRF6715MPBF | DirectFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6655PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6655TR1 | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6655TR1PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6655TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N MOSFET, 100V, 3.4A, DIRECTFET SH |
| IRF6655TRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。