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參數(shù)資料
| 型號： | IRF6655 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET Typical values (unless otherwise specified) |
| 中文描述： | DirectFET功率MOSFET的典型值（除非另有說明） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 262K |
| 代理商： | IRF6655 |
2
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Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.8
–––
–––
–––
–––
–––
6.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
53
–––
-11
–––
–––
–––
–––
–––
8.7
2.1
0.58
2.8
3.2
3.4
4.5
1.9
7.4
2.8
14
4.3
530
110
29
510
67
Max. Units
–––
–––
62
4.8
–––
20
250
100
-100
–––
11.7
–––
–––
4.2
–––
–––
–––
2.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
V/°C
m
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Diode Characteristics
nC
See Fig. 17
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max. Units
38
I
S
A
I
SM
–––
–––
34
V
SD
t
rr
Q
rr
–––
–––
–––
–––
31
37
1.3
47
56
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
R
G
=6.0
V
DS
= 25V
= 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 5.0A
V
GS
= 0V
V
DS
= V
GS
, I
D
= 25μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 5.0A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.0A
T
J
= 25°C, I
F
= 5.0A, V
DD
= 25V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
I
D
= 5.0A
V
GS
= 10V
V
DS
= 50V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6655PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6655TR1 | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6655TR1PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6655TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N MOSFET, 100V, 3.4A, DIRECTFET SH |
| IRF6655TRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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