參數(shù)資料
型號(hào): IRF6655
廠商: International Rectifier
英文描述: DirectFET Power MOSFET Typical values (unless otherwise specified)
中文描述: DirectFET功率MOSFET的典型值(除非另有說明)
文件頁數(shù): 6/10頁
文件大?。?/td> 262K
代理商: IRF6655
6
www.irf.com
Fig 15b.
Gate Charge Waveform
Fig 15a.
Gate Charge Test Circuit
Fig 16b.
Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 16a.
Unclamped Inductive Test Circuit
Fig 17b.
Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 17a.
Switching Time Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
≤ 1
≤ 0.1 %
+
-
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6655PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET
IRF6655TR1 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6655TR1PBF 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6655TR1PBF 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N MOSFET, 100V, 3.4A, DIRECTFET SH
IRF6655TRPBF 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube