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參數(shù)資料
| 型號(hào)： | IRF6655 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET Typical values (unless otherwise specified) |
| 中文描述： | DirectFET功率MOSFET的典型值（除非另有說(shuō)明） |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 262K |
| 代理商： | IRF6655 |
4
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 9.
Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM
≤
60μs PULSE WIDTH
Tj = 25°C
6.0V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
6.0V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID
(
)
TJ = -40°C
TJ = 25°C
TJ = 150°C
VDS = 25V
≤
60μs PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
TD
ID = 5.0A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
2
4
6
8
10
ID, Drain Current (A)
40
60
80
100
120
RD
)
TJ = 25°C
TJ = 125°C
Vgs = 10V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6655PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6655TR1 | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6655TR1PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6655TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N MOSFET, 100V, 3.4A, DIRECTFET SH |
| IRF6655TRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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