參數(shù)資料
型號(hào)： IRF6638PBF
廠商： International Rectifier
英文描述： DirectFET Power MOSFET
中文描述： DirectFET功率MOSFET
文件頁數(shù)： 3/10頁
文件大?。?/td> 268K
代理商： IRF6638PBF
www.irf.com
3
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
1.280114
8.725568
21.75
13.25114
τ
i (sec)
0.000322
0.164798
2.2576
69
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
τ
A
τ
A
τ
4
τ
4
R
4
R
4
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
Surface mounted on 1 in. square Cu
(still air).
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratings
Parameter
Units
W
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Thermal Resistance
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
°C/W
W/°C
0.022
270
-40 to + 150
Max.
2.8
1.8
89
相關(guān)PDF資料
PDF描述
IRF6638TRPbF DirectFET Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRF6638TR1PBF 制造商:International Rectifier 功能描述:MOSFET N
IRF6638TR1PBF 制造商:International Rectifier 功能描述:MOSFET N CHANNEL 30V 25A
IRF6638TRPBF 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6641TR1PBF 功能描述:MOSFET MOSFT 200V 26A 60mOhm 34nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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