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參數(shù)資料
| 型號： | IRF6643TRPBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET - Typical value (unless otherwise specified) |
| 中文描述： | DirectFET功率MOSFET -典型值（除非另有說明） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 269K |
| 代理商： | IRF6643TRPBF |
www.irf.com
1
11/28/06
DirectFET
Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
Description
The IRF6643PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Fig 1.
Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.43mH, R
G
= 25
, I
AS
= 7.6A.
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6643TRPbF
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
0
10
20
30
40
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
VDS= 120V
VDS= 75V
VDS= 30V
ID= 7.6A
4
6
VGS, Gate-to-Source Voltage (V)
8
10
12
14
16
20
30
40
50
60
70
T
)
TJ = 25°C
TJ = 125°C
ID = 7.6A
MZ
MN
The IRF6643PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-
DC converters.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
DirectFET
ISOMETRIC
V
DSS
150V max ±20V max
Q
g tot
V
GS
R
DS(on)
29m
@ 10V
V
gs(th)
Q
gd
39nC
11nC
4.0V
Units
V
A
mJ
A
50
7.6
Max.
150
5.0
35
76
±20
6.2
相關PDF資料 |
PDF描述 |
|---|---|
| IRF6645 | DirectFET Power MOSFET Typical calues (unless otherwise specified) |
| IRF6648 | DirectFET Power MOSFET |
| IRF6655 | DirectFET Power MOSFET Typical values (unless otherwise specified) |
| IRF6668PBF | DirectFET Power MOSFET |
| IRF6668TRBF | DirectFET Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6644 | 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6644TR1 | 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644TR1PBF | 功能描述:MOSFET MOSFT 100V 60A 13mOhm 35nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
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