參數(shù)資料
型號(hào)： IRF6643TRPBF
廠商： International Rectifier
英文描述： DirectFET Power MOSFET - Typical value (unless otherwise specified)
中文描述： DirectFET功率MOSFET -典型值（除非另有說(shuō)明）
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 269K
代理商： IRF6643TRPBF
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristic @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
I
DSS
Drain-to-Source Leakage Current
Min.
150
Typ.
–––
Max.
–––
Units
V
–––
0.18
–––
V/°C
m
V
–––
29
34.5
3.0
4.0
4.9
–––
-11
–––
mV/°C
–––
–––
20
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Q
g
Forward Transconductance
16
–––
–––
S
Total Gate Charge
–––
39
55
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Diode Characteristics
Pre-Vth Gate-to-Source Charge
–––
9.6
–––
Post-Vth Gate-to-Source Charge
–––
2.2
–––
nC
Gate-to-Drain Charge
–––
11
17
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
–––
16
–––
See Fig. 15
–––
13
–––
–––
14
–––
nC
Gate Resistance
–––
0.8
–––
Turn-On Delay Time
–––
9.2
–––
Rise Time
–––
5.0
–––
Turn-Off Delay Time
–––
13
–––
ns
Fall Time
–––
4.4
–––
Input Capacitance
–––
2340
–––
Output Capacitance
–––
300
–––
pF
Reverse Transfer Capacitance
–––
61
–––
Output Capacitance
–––
1950
–––
Output Capacitance
–––
140
–––
Parameter
Continuous Source Current
(Body Diode) T
J
= 25°C
Pulsed Source Current
Min.
–––
Typ.
–––
Max.
58
Units
I
S
A
I
SM
–––
–––
76
(Body Diode)
V
SD
t
rr
Q
rr
Diode Forward Voltage
–––
–––
1.3
V
Reverse Recovery Time
–––
67
100
ns
Reverse Recovery Charge
–––
190
280
nC
MOSFET symbol
Clamped Inductive Load
V
DS
= 25V
= 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 75V, V
GS
= 10V
I
D
= 7.6A
V
GS
= 0V
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 7.6A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.6A
T
J
= 25°C, I
F
= 7.6A, V
DD
= 50V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 7.6A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
I
D
= 7.6A
V
GS
= 10V
V
DS
= 75V
相關(guān)PDF資料
PDF描述
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參數(shù)描述
IRF6644 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6644PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET
IRF6644TR1 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6644TR1PBF 功能描述:MOSFET MOSFT 100V 60A 13mOhm 35nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6644TR1PBF 制造商:International Rectifier 功能描述:MOSFET
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