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參數資料
| 型號： | IRF6636 |
| 廠商： | International Rectifier |
| 英文描述： | Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce |
| 中文描述： | 低電阻和低電荷隨著超低封裝電感減少 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 238K |
| 代理商： | IRF6636 |
Power MOSFET
d
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
20V max
±20V max
3.2m
@ 10V
Q
g tot
Q
gd
Q
gs2
18nC
6.1nC
1.9nC
Description
The IRF6636 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socke
t.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
c
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
z
RoHS compliant containing no lead or bromide
c
z
Low Profile (<0.7 mm)
z
Dual Sided Cooling Compatible
c
z
Ultra Low Package Inductance
z
Optimized for High Frequency Switching
c
z
Ideal for CPU Core DC-DC Converters
z
Optimized for for Control FET socket of Sync. Buck Converter
c
z
Low Conduction and Switching Losses
z
Compatible with existing Surface Mount Techniques
c
c
Click on this section to link to the appropriate technical paper.
d
Click on this section to link to the DirectFET MOSFETs
e
Repetitive rating; pulse width limited by max. junction temperature.
f
Starting T
J
= 25°C, L = 0.27mH, R
G
= 25
, I
AS
= 14A.
h
Surface mounted on 1 in. square Cu board, steady state.
k
T
C
measured with thermocouple mounted to top (Drain) of part.
Notes:
DirectFET
ISOMETRIC
ST
MQ
MX
MT
0
10
20
30
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 16V
VDS= 10V
ID= 14A
R
DS(on)
4.6m
@ 4.5V
Q
oss
V
gs(th)
10nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
h
Continuous Drain Current, V
GS
@ 10V
h
Continuous Drain Current, V
GS
@ 10V
k
Pulsed Drain Current
e
Single Pulse Avalanche Energy
f
Avalanche Current
e
A
mJ
A
14
Max.
20
15
81
140
28
±20
18
Q
rr
7.3nC
1.8V
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
TD
)
ID = 18A
TJ = 25°C
TJ = 125°C
PD - 96977B
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|---|---|
| IRF6638PBF | DirectFET Power MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6636TR1 | 功能描述:MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6636TR1PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6636TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 20V, 15A, DIRECTFET ST |
| IRF6636TRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6637 | 功能描述:MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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