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參數(shù)資料
| 型號： | IRF6610 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM |
| 中文描述： | HEXFET功率MOSFET硅技術(shù)與先進的DirectFETTM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 243K |
| 代理商： | IRF6610 |
Power MOSFET
d
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
20V max
±20V max
5.2m
@ 10V
Q
g tot
Q
gd
Q
gs2
11nC
3.6nC
1.3nC
Description
The IRF6610 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socke
t.
PD - 97012
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
c
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
z
Lead and Bromide Free
c
z
Low Profile (<0.7 mm)
z
Dual Sided Cooling Compatible
c
z
Ultra Low Package Inductance
z
Optimized for High Frequency Switching
c
z
Ideal for CPU Core DC-DC Converters
z
Optimized for both Sync.FET and some Control FET
application
c
z
Low Conduction and Switching Losses
z
Compatible with existing Surface Mount Techniques
c
c
Click on this section to link to the appropriate technical paper.
d
Click on this section to link to the DirectFET Website.
e
Surface mounted on 1 in. square Cu board, steady state.
f
T
C
measured with thermocouple mounted to top (Drain) of part.
g
Repetitive rating; pulse width limited by max. junction temperature.
h
Starting T
J
= 25°C, L = 0.18mH, R
G
= 25
, I
AS
= 12A.
Notes:
MQ
MX
MT
MP
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
30
TS
)
ID = 15A
TJ = 25°C
TJ = 125°C
R
DS(on)
8.2m
@ 4.5V
Q
oss
V
gs(th)
5.9nC
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
e
Continuous Drain Current, V
GS
@ 10V
e
Continuous Drain Current, V
GS
@ 10V
f
Pulsed Drain Current
g
Single Pulse Avalanche Energy
h
Avalanche Current
g
A
mJ
A
12
Max.
20
12
66
120
13
±20
15
0
2
4
6
8
10
12
14
16
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 16V
VDS= 10V
ID= 12A
Q
rr
6.4nC
2.1V
DirectFET
ISOMETRIC
SQ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6610TR1 | 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6610TR1PBF | 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6610TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6610TRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 6.8mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6611 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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