參數(shù)資料
型號(hào)： IRF6610
廠商： International Rectifier
英文描述： HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
中文描述： HEXFET功率MOSFET硅技術(shù)與先進(jìn)的DirectFETTM
文件頁數(shù)： 2/9頁
文件大?。?/td> 243K
代理商： IRF6610
IRF6610
2
www.irf.com
c
Pulse width
≤
400μs; duty cycle
≤
2%.
d
Repetitive rating; pulse width limited by max. junction temperature.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
20
–––
–––
–––
1.65
–––
–––
–––
–––
–––
41
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
15
5.2
8.2
2.1
-5.2
–––
–––
–––
–––
–––
11
3.9
1.3
3.6
2.4
4.9
5.9
2.0
12
51
15
5.7
1520
440
220
Max. Units
–––
–––
6.8
10.7
2.55
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
nC
See Fig. 15
nC
ns
pF
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
Typ.
–––
Max. Units
2.8
I
S
A
I
SM
–––
–––
120
V
SD
t
rr
Q
rr
–––
–––
–––
–––
12
2.4
1.0
18
3.6
V
ns
nC
di/dt = 100A/μs
c
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
c
T
J
= 25°C, I
F
= 12A
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 12A
c
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V
I
D
= 12A
V
GS
= 0V
V
DS
= 10V
= 1.0MHz
I
D
= 12A
Clamped Inductive Load
V
DD
= 16V, V
GS
= 4.5V
c
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
c
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DS
= 10V
MOSFET symbol
Conditions
V
DS
= 10V, V
GS
= 0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6610TR1 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6610TR1PBF 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6610TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6610TRPBF 功能描述:MOSFET 20V 1 N-CH HEXFET 6.8mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6611 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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