參數(shù)資料
型號： IRF6610
廠商： International Rectifier
英文描述： HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
中文描述： HEXFET功率MOSFET硅技術(shù)與先進(jìn)的DirectFETTM
文件頁數(shù)： 7/9頁
文件大?。?/td> 243K
代理商： IRF6610
IRF6610
www.irf.com
7
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel
HEXFET
Power MOSFETs
DirectFET
Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Reverse
Recovery
Body Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Current
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by R
Driver same type as D.U.T.
I
controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
e
f
d
R
G
V
DD
D.U.T
c
相關(guān)PDF資料
PDF描述
IRF6618TR1 Power MOSFET
IRF6618 HEXFET Power MOSFET
IRF6621 The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
IRF6622 DirectFET Power MOSFET
IRF6629PBF DirectFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6610TR1 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6610TR1PBF 功能描述:MOSFET 20V 1 N-CH 5.2mOhm DirectFET 2.1Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6610TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6610TRPBF 功能描述:MOSFET 20V 1 N-CH HEXFET 6.8mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6611 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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