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參數(shù)資料
| 型號(hào)： | IRF6618TR1 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 230K |
| 代理商： | IRF6618TR1 |
www.irf.com
1
11/10/04
IRF6609
HEXFET Power MOSFET
R
DS(on)
max
2.0m
@V
GS
= 10V
2.6m
@V
GS
= 4.5V
Notes
through are on page 10
Low Conduction Losses
Low Switching Losses
Ideal Synchronous Rectifier MOSFET
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount
Techniques
Description
The IRF6609 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications
.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JC
Junction-to-Case
R
θ
J-PCB
Junction-to-PCB Mounted
V
DSS
20V
Qg
46nC
Units
V
A
Pulsed Drain Current
Power Dissipation
Power Dissipation
W
W/°C
°C
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
-40 to + 150
2.8
1.8
89
0.022
Max.
20
31
25
250
±20
150
DirectFET
ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6618 | HEXFET Power MOSFET |
| IRF6621 | The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance |
| IRF6622 | DirectFET Power MOSFET |
| IRF6629PBF | DirectFET Power MOSFET |
| IRF6629TRPbF | DirectFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6618TR1PBF | 功能描述:MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6618TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6618TRPBF | 功能描述:MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6619 | 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6619 | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
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