參數(shù)資料
型號: IRF6618TR1
廠商: International Rectifier
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 9/10頁
文件大小: 230K
代理商: IRF6618TR1
www.irf.com
9
DirectFET
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Substrate and PCB Layout, MT Outline
DirectFET
(Showing component orientation).
Tape & Reel Dimension
METRIC
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
IMPERIAL
STANDARD OPTION
(QTY 4800)
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel,
order IRF6618TR1
METRIC
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
TR1 OPTION
(QTY 1000)
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
REEL DIMENSIONS
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相關代理商/技術參數(shù)
參數(shù)描述
IRF6618TR1PBF 功能描述:MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6618TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6618TRPBF 功能描述:MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6619 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6619 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes