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參數(shù)資料
| 型號： | IRF6618TR1 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 230K |
| 代理商： | IRF6618TR1 |
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
15
–––
1.6
2.0
2.0
2.6
–––
2.45
-6.1
–––
–––
1.0
–––
150
–––
100
–––
-100
–––
–––
46
69
15
–––
4.7
–––
15
–––
11
–––
20
–––
26
–––
24
–––
95
–––
26
–––
9.8
–––
6290
–––
1850
–––
860
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 17
nC
ns
pF
Avalanche Characteristics
Parameter
Units
mJ
A
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
31
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
250
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
–––
–––
–––
0.80
32
26
1.2
48
39
V
ns
nC
Typ.
–––
–––
I
D
= 17A
V
GS
= 0V
V
DS
= 10V
= 1.0MHz
I
D
= 25A
Clamped Inductive Load
230
25
Max.
T
J
= 25°C, I
F
= 25A
di/dt = 100A/μs
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
GS
= 4.5V, I
D
= 25A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 25A
V
GS
= 4.5V
MOSFET symbol
Conditions
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
V
DS
= 10V
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| IRF6618TRPBF | 功能描述:MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6619 | 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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