參數(shù)資料
型號(hào): IBM01644F5B
廠商: IBM Microeletronics
英文描述: 16M x 8 13/11 Stacked DRAM(16M x 8 棧式動(dòng)態(tài)RAM(帶24條地址線,其中13條為行地址選通,11條為列地址選通))
中文描述: 16米x 8 13/11堆疊DRAM(1,600 × 8棧式動(dòng)態(tài)隨機(jī)存儲(chǔ)器(帶24條地址線,其中13條為行地址選通,11條為列地址選通))
文件頁數(shù): 8/26頁
文件大小: 467K
代理商: IBM01644F5B
IBM01644F5B
16M x 8 13/11 Stacked DRAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 26
96H5533
GA15-5143-00
Revised 03/97
Read Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RAC
Access Time from RAS
50
60
ns
1, 2, 4
t
CAC
Access Time from CAS
13
15
ns
1, 4
t
AA
Access Time from Address
25
30
ns
1, 4
t
OEA
Access Time From OE
13
15
ns
4
t
RCS
Read Command Setup Time
0
0
ns
t
RCH
Read Command Hold Time to CAS
0
0
ns
5
t
RRH
Read Command Hold Time to RAS
0
0
ns
t
RAL
Column Address to RAS Lead Time
25
30
ns
t
CLZ
CAS to Output in Low-Z
0
0
ns
4
t
OEZ
Output Buffer Turn-Off Delay From OE
0
13
0
15
ns
6
t
CDD
CAS to D
IN
Delay Time
13
15
ns
3
t
OFF
Output Buffer Turn-Off Delay
0
13
0
15
ns
6
t
OES
OE Setup Time Prior to CAS
5
5
ns
t
ORD
OE Setup Time Prior to RAS (Hidden Refresh)
0
0
ns
1. Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(max.) limit, then access time is controlled by t
CAC
.
2. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If t
RAD
is
greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
3. Either t
CDD
or t
OED
must be satisfied.
4. Measured with the specified current load and 100pF.
5. Either t
RCH
or t
RRH
must be satisfied for a read cycle.
6. t
OFF
(max.) and t
OEZ
(max.) define the time at which the output achieves the open circuit condition and are not referenced to output
voltage levels.
Discontinued (8/98 - last order; 12/98 last ship)
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