參數(shù)資料
型號: IBM01644F5B
廠商: IBM Microeletronics
英文描述: 16M x 8 13/11 Stacked DRAM(16M x 8 棧式動(dòng)態(tài)RAM(帶24條地址線,其中13條為行地址選通,11條為列地址選通))
中文描述: 16米x 8 13/11堆疊DRAM(1,600 × 8棧式動(dòng)態(tài)隨機(jī)存儲(chǔ)器(帶24條地址線,其中13條為行地址選通,11條為列地址選通))
文件頁數(shù): 3/26頁
文件大?。?/td> 467K
代理商: IBM01644F5B
IBM01644F5B
16M x 8 13/11 Stacked DRAM
96H5533
GA15-5143-00
Revised 03/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 3 of 26
Truth Table
Function
RAS
CAS
WE
OE
Row
Address
Column
Address
I/O0 - I/O7
Standby
H
H
X
X
X
X
X
High Impedance
Read
L
L
H
L
Row
Col.
Data Out
Early-Write
L
L
L
X
Row
Col.
Data In
Delayed-Write
L
L
H
L
H
Row
Col.
Data In
Read-Modify-Write
L
L
H
L
L
H
Row
Col.
Data Out, Data In
EDO (Hyper Page) Mode
Read
1st Cycle
L
H
L
H
L
Row
Col.
Data Out
2nd Cycle
L
H
L
H
L
N/A
Col.
Data Out
EDO (Hyper Page) Mode
Write
1st Cycle
L
H
L
L
X
Row
Col.
Data In
2nd Cycle
L
H
L
L
X
N/A
Col.
Data In
EDO (Hyper Page) Mode
Read-Modify-Write
1st Cycle
L
H
L
H
L
L
H
Row
Col.
Data Out, Data In
2nd Cycle
L
H
L
H
L
L
H
N/A
Col.
Data Out, Data In
RAS-Only Refresh
L
H
X
X
Row
N/A
High Impedance
CAS-Before-RAS Refresh
H
L
L
H
X
X
N/A
High Impedance
Hidden Refresh
Read
L
H
L
L
H
L
Row
Col.
Data Out
Write
L
H
L
L
L
H
X
Row
Col.
Data In
Discontinued (8/98 - last order; 12/98 last ship)
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