參數(shù)資料
型號(hào): HYB25D128400CT-5
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 32M X 4 DDR DRAM, 0.7 ns, PDSO66
封裝: PLASTIC, TSOP2-66
文件頁(yè)數(shù): 25/44頁(yè)
文件大小: 2618K
代理商: HYB25D128400CT-5
HYB25D128[40/80/16]0C[C/E/F/T]
128-Mbit Double-Data-Rate SDRAM
Internet Data Sheet
Rev. 1.70, 2008-04
31
03292006-U5AN-6TI1
TABLE 23
AC Timing - Absolute Specifications
Parameter
Symbol
–5
–6
Unit
Note/ Test
Condition 1)
DDR400B
DDR333B
Min.
Max.
Min.
Max.
DQ output access time from
CK/CK
t
AC
–0.7
+0.7
–0.7
+0.7
ns
CK high-level width
t
CH
0.45
0.55
0.45
0.55
t
CK
Clock cycle time
t
CK
5
8
6
12
ns
CL = 3.0 2)3)4)5)
6
12
6
12
ns
CL = 2.5 2)3)4)5)
7
12
7.5
12
ns
CL = 2.0 2)3)4)5)
CK low-level width
t
CL
0.45
0.55
0.45
0.55
t
CK
Auto precharge write recovery +
precharge time
t
DAL
Min. : (
t
WR/tCK)+(tRP/tCK), Max. : —
t
CK
DQ and DM input hold time
t
DH
0.4
0.45
ns
DQ and DM input pulse width
(each input)
t
DIPW
1.75
1.75
ns
DQS output access time from
CK/CK
t
DQSCK
–0.6
+0.6
–0.6
+0.6
ns
DQS input low (high) pulse width
(write cycle)
t
DQSL,H
0.35
0.35
t
CK
DQS-DQ skew (DQS and
associated DQ signals)
t
DQSQ
+0.40
+0.45
ns
TSOPII
DQS-DQ skew (DQS and
associated DQ signals)
t
DQSQ
+0.40
+0.40
ns
TFBGA
Write command to 1st DQS
latching transition
t
DQSS
0.72
1.25
0.75
1.25
t
CK
DQ and DM input setup time
t
DS
0.4
0.45
ns
DQS falling edge hold time from
CK (write cycle)
t
DSH
0.2
0.2
t
CK
DQS falling edge to CK setup
time (write cycle)
t
DSS
0.2
0.2
t
CK
Clock Half Period
t
HP
min. (
t
CL,
t
CH)
—min. (
t
CL,
t
CH)
—ns
Data-out high-impedance time
from CK/CK
t
HZ
+0.7
+0.7
ns
Address and control input hold
time
t
IH
0.6
0.75
ns
fast slew rate
0.7
0.8
ns
slow slew rate
Control and Addr. input pulse
width (each input)
t
IPW
2.2
2.2
ns
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