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參數(shù)資料
| 型號： | GS8182S18GBD-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 |
| 文件頁數(shù)： | 24/36頁 |
| 文件大?。?/td> | 339K |
| 代理商： | GS8182S18GBD-200I |
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Preliminary
GS8182S08/09/18BD-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 6/2007
30/36
2007, GSI Technology
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
Test Port Input Low Voltage
VILJ
–
0.3
0.3 * VDD
V1
Test Port Input High Voltage
VIHJ
0.6 * VDD
VDD +0.3
V1
TMS, TCK and TDI Input Leakage Current
IINHJ
–
300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–
1
100
uA
3
TDO Output Leakage Current
IOLJ
–
11
uA
4
Test Port Output High Voltage
VOHJ
VDD – 200 mV
—
V5, 6
Test Port Output Low Voltage
VOLJ
—
0.4
V
5, 7
Test Port Output CMOS High
VOHJC
VDD – 100 mV
—
V5, 8
Test Port Output CMOS Low
VOLJC
—
100 mV
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –1 V < Vi < VDDn +1 V not to exceed 2.93.6 V maximum, with a pulse width not to exceed 20%
tTKC.
2. VILJ ≤ VIN ≤ VDDn
3. 0 V
≤ V
IN ≤ V
ILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDD supply.
6. IOHJ = –2 mA
7. IOLJ = + 2 mA
8. IOHJC = –100 uA
9. IOLJC = +100 uA
JTAG TAP Instruction Set Summary
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8182S36BD-167 | 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays |
| GS8182S36BD-167I | 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays |
| GS8182S36BD-200 | 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays |
| GS8182S36BD-200I | 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays |
| GS8182S36BD-250 | 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays |
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