參數(shù)資料
型號: GS8182S18GBD-200I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 DDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165
文件頁數(shù): 13/36頁
文件大?。?/td> 339K
代理商: GS8182S18GBD-200I
Preliminary
GS8182S08/09/18BD-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 6/2007
20/36
2007, GSI Technology
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-167
Units
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Clock
K, K Clock Cycle Time
C, C Clock Cycle Time
tKHKH
tCHCH
3.05.0
3.35.0
4.08.4
5.08.4
6.08.4
ns
tTKC Variable
tKCVar
—0.2
ns
5
K, K Clock High Pulse Width
C, C Clock High Pulse Width
tKHKL
tCHCL
1.2
1.32
1.6
2.0
2.4
ns
K, K Clock Low Pulse Width
C, C Clock Low Pulse Width
tKLKH
tCLCH
1.2
1.32
1.6
2.0
2.4
ns
K to K High
C to C High
tKHKH
tCHCH
1.35
1.49
1.8
2.2
2.7
ns
K to K High
C to C High
tKHKH
tCHCH
1.35
1.49
1.8
2.2
2.7
ns
K, K Clock High to C, C Clock High
tKHCH
0
1.3
0
1.45
0
1.8
0
2.3
0
2.8
ns
DLL Lock Time
tKCLock
1024
1024
1024
1024
1024
cycle
6
K Static to DLL reset
tKCReset
30
30
30
30
30
ns
Output Times
K, K Clock High to Data Output Valid
C, C Clock High to Data Output Valid
tKHQV
tCHQV
0.45
0.45
0.45
0.45
0.5
ns
3
K, K Clock High to Data Output Hold
C, C Clock High to Data Output Hold
tKHQX
tCHQX
–0.45
–0.45
–0.45
–0.45
–0.5
ns
3
K, K Clock High to Echo Clock Valid
C, C Clock High to Echo Clock Valid
tKHCQV
tCHCQV
0.45
0.45
0.45
0.45
0.5
ns
K, K Clock High to Echo Clock Hold
C, C Clock High to Echo Clock Hold
tKHCQX
tCHCQX
–0.45
–0.45
–0.45
–0.45
–0.5
ns
CQ, CQ High Output Valid
tCQHQV
0.25
0.27
0.30
0.35
0.40
ns
7
CQ, CQ High Output Hold
tCQHQX
–0.25
–0.27
–0.30
–0.35
–0.40
ns
7
CQ Phase Distortion
tCQHCQH
1.10
1.24
1.55
1.95
2.45
ns
K Clock High to Data Output High-Z
C Clock High to Data Output High-Z
tKHQZ
tCHQZ
0.45
0.45
0.45
0.45
0.5
ns
3
K Clock High to Data Output Low-Z
C Clock High to Data Output Low-Z
tKHQX1
tCHQX1
–0.45
–0.45
–0.45
–0.45
–0.5
ns
3
Setup Times
Address Input Setup Time
tAVKH
0.4
0.4
0.5
0.6
0.7
ns
Control Input Setup Time
tIVKH
0.4
0.4
0.5
0.6
0.7
ns
2
Data Input Setup Time
tDVKH
0.28
0.3
0.35
0.4
0.5
ns
相關(guān)PDF資料
PDF描述
GS8182T36BGD-333IT 512K X 36 DDR SRAM, 0.45 ns, PBGA165
GS82032AGQ-133IT 64K X 32 CACHE SRAM, 10 ns, PQFP100
GS8321EV18GE-133T 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
GS8321ZV36E-150T 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
GS832236AB-300T 1M X 36 CACHE SRAM, PBGA119
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8182S36BD-167 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
GS8182S36BD-167I 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
GS8182S36BD-200 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
GS8182S36BD-200I 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays
GS8182S36BD-250 制造商:GSI Technology 功能描述:512K X 36 (18 MEG) BURST OF 2 - Trays