參數資料
型號: GS8162V18AGB-350I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 4.5 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數: 8/37頁
文件大?。?/td> 947K
代理商: GS8162V18AGB-350I
Rev: 1.00a 6/2003
16/37
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
Preliminary
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 3.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 3.6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 3.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 3.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
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