參數(shù)資料
型號: GS8162V18AGB-350I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 4.5 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 36/37頁
文件大?。?/td> 947K
代理商: GS8162V18AGB-350I
Rev: 1.00a 6/2003
8/37
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8162V18A(B/D)/GS8162V36A(B/D)/GS8162V72A(C)
Preliminary
GS8162V18/36A BGA Pin Description
Symbol
Type
Description
A0, A1
I
Address field LSBs and Address Counter Preset Inputs
A
I
Address Inputs
DQA
DQB
DQC
DQD
I/O
Data Input and Output pins
BA, BB, BC, BD
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low
NC
No Connect
CK
I
Clock Input Signal; active high
BW
I
Byte Write—Writes all enabled bytes; active low
GW
I
Global Write Enable—Writes all bytes; active low
E1
I
Chip Enable; active low
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active low
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
SCD
I
Single Cycle Deselect/Dual Cyle Deselect Mode Control
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
PE
I
Parity Bit Enable; active low (only offered on 119 BGA)
VDD
I
Core power supply
VSS
I
I/O and Core Ground
VDDQ
I
Output driver power supply
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